Annealing Induced Saturation in Electron Concentration for V-Doped CdO

As-grown Ar-deposited Cd1−xVxO and Ar/O2-deposited Cd1−yVyO feature lower higher electron concentrations than 4 × 1020 cm−3, respectively. After isothermal isochronal annealing under N2 ambient, we find that the two series exhibit a decrease or increase in until ~4 cm−3 which is close to Fermi stabilization energy (EFS) level of CdO, with assistance native defects. An amphoteric defects model used explain changing trends concentrations. The tendencies mobility further confirm our results. This work may provide some strategies predict electrical properties CdO.